作者:
(德)施密特(O. G. Schmidt)主编著|(德)施密特(O. G. Schmidt)主编编|(德)施密特(O. G. Schmidt)主编译|(德)施密特(O. G. Schmidt)主编绘
出版社:北京大学出版社
出版时间:2012-05-01
版次:1
印次:1
印刷时间:2013-07-01
字数:867000
页数:707
开本:大32开
ISBN:9787301227855
版权提供:北京大学出版社
作者:(德)施密特(O. G. Schmidt)主编
著:(德)施密特(O. G. Schmidt)主编
装帧:平装
印次:1
定价:122.00
ISBN:9787301227855
出版社:北京大学出版社
开本:大32开
印刷时间:2013-07-01
语种:英语
出版时间:2012-05-01
页数:707
外部编号:8083782
版次:1
成品尺寸:暂无
1.1 General 1 Physical Mechanisms of Self-Organized Formation of Quantum Dots V. Shchukin, D. Bimberg 2 Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001) C. Teichert, M.G. Lagally 1.2 Compact Lateral Quantum Dot Configurations 3 Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions J.A. Floro, R. Hull, J.L. Gray 4 Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes A. Rastelli, R. Songmuang, S. Kiravittaya, O.G. Schmidt 1.3 Ordering in Single Layers 5 Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth - the SiGe/Si System S.H. Christiansen, M. Schmidbauer, H. Wawra, R. Schneider, W. Neumann, H.P. Strunk 6 Ge Quantum Dot Self-Alignment on Vicinal Substrates I. Berbezier, A. Ronda, A. Karmous 7 Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGel-x Buffer Layer H.-j. Kim, Y.-H. Xie, K.L. Wang ……