1Surface and Interface Physics: Its Definition and Importance Panel Ⅰ: Ultrahigh Vacuum (UHV) Technology Panel Ⅱ:Basics of Particle Optics and Spectroscopy Problems 2Preparation of Well—Defined Surfaces,lnterfaces and Thin Films 2.1 Why Is Ultrahigh Vacuum Used? 2.2Cleavage in UHV 2.3 Ion Bombardment and Annealing 2.4Evaporation and Molecular Beam Epitaxy (MBE) 2.5Epitaxy by Means of Chemical Reactions Panel Ⅲ: Auger Electron Spectroscopy (AES) Panel Ⅳ:Secondary Ion Mass Spectroscopy (SIMS) Problems 3Morphology and Structure of Surfaces,lnterfaces and Thin Films 3.1 Surface Stress, Surface Energy, and Macroscopic Shape 3.2Relaxation, Reconstruction, and Defects 3.3Two—Dimensional Lattices, Superstructure, and Reciprocal Space 3.3.1Surface Lattices and Superstructures 3.3.22D Reciprocal Lattice 3.4Structural Models of Solid—Solid Interfaces 3.5 Nucleation and Growth of Thin Films 3.5.1Modes of Film Growth 3.5.2“Capillary Model" of Nucleation 3.6 Film—Growth Studies: Experimental Methods and Some Results Panel Ⅴ: Scanning Electron Microscopy (SEM) and Microprobe Techniques Panel Ⅵ:Scanning Tunneling Microscopy (STM) Panel Ⅶ:Surface Extended X—Ray Absorption Fine Structure(SEXAFS) Problems 4 Scattering from Surfaces and Thin Films 4.1 Kinematic Theory of Surface Scattering 4.2 The Kinematic Theory of Low—Energy Electron Diffraction 4.3 What Can We Learn from Inspection of a LEED Pattem? 4.4 Dynamic LEED Theory, and Structure Analysis 4.4.1Matching Formalism 4.4.2Multiple—Scattering Formalism 4.4.3 Structure Analysis 4.5 Kinematics of an Inelastic Surface Scattering Experiment 4.6 Dielectric Theory of Inelastic Electron Scattering 4.6.1 Bulk Scattering 4.6.2 Surface Scattering 4.7Dielectric Scattering on a Thin Surface Layer 4.8Some Experimental Examples of Inelastic Scatteringof Low—Energy Electrons at Surfaces 4.9The Classical Limit of Particle Scattering 4.10Conservation Laws for Atomic Collisions: ChemicalSurface Analysis 4.11 Rutherford BackScattering (RBS): Channeling and Blocking Panel Ⅷ:Low—Energy Electron Diffraction (LEED) and ReflectionHigh—Energy Electron Diffraction (RHEED) Panel Ⅸ:Electron Energy Loss Spectroscopy (EELS) Problems 5 Surface Phonons 5.1The Existence of "Surface" Lattice Vibrations on a Linear Chain 5.2 Extension to a Three—Dimensional Solid with a Surface 5.3 Rayleigh Waves 5.4 The Use of Rayleigh Waves as High—Frequency Filters 5.5Surface—Phonon (Plasmon) Polaritons 5.6Dispersion Curves from Experiment and from Realistic Calculations Panel Ⅹ: Atom and Molecular Beam Scattering Problems 6 Electronic Surface States 6.1 Surface States for a Semi—Infinite Chain in the Nearly—Free Electron Model 6.2 Surface States of a 3D Crystal and Their Charging Character 6.2.1 Intrinsic Surface States 6.2.2 Extrinsic Surface States 6.3Aspects of Photoemission Theory 6.3.1 General Description 6.3.2 Angle—Integrated Photoemission 6.3.3Bulk— and Surface—State Emission 6.3.4 Symmetry of Initial States and Selection Rules 6.3.5Many—Body Aspects 6.4 Some Surface—State Band Structures for Metals 6.4.1s— and p—like Surface States 6.4.2 d—like Surface States 6.4.3Empty and Image—Potential Surface States 6.5Surface States on Semiconductors 6.5.1Elemental Semiconductors 6.5.2Ⅲ—Ⅴ Compound Semiconductors 6.5.3 Group Ⅲ Nitrides 6.5.4Ⅱ—Ⅵ Compound Semiconductors Panel Ⅺ: Photoemission and Inverse Photoemission Problems 7 Space—Charge Layers at Semiconductor Interfaces 7.1 Origin and Classification of Space—Charge Layers 7.2The Schottky Depletion Space—Charge Layer 7.3Weak Space—Charge Layers 7.4 Space—Charge Layers on Highly Degenerate Semiconductors 7.5 The Genera J Case ofa Space—Charge Layerand Fermi—Ievel Pinning 7.6Quantized Accumulation and Inversion Layers 7.7 Some Particular Interfaces and Their Surface Potentials 7.8The Silicon MOS Field—Effect Transistor 7.9Magnetic Field Induced Quantizatio 7.10Two—Dimensional Plasmons Panel Ⅻ: Optical Surface Techniques Problems 8Metal—Semconductor Junctions and SemiconductorHeterostructures 8.1 General Principles Governing the Electronic Structureof Solid—Solid Interfaces 8.2 Metal—Induced Gap States (MIGS) at the Metal—Semiconductor Interface 8.3Virtual Induced Gap States (VIGS) at the Semiconductor Heterointerface 8.4 Structure— and Chemistry—Dependent Models oflnterface States 8.5 Some Applications of Metal—Semiconductor Junctionsand Semiconductor Heterostructures 8.5.1Schottky Barriers 8.5.2 Semiconductor Heterojunctions and Modulation Doping 8.5.3The High Electron Mobility Transistor (HEMT) 8.6Quantum Effects in 2D Electron Gases at Semiconductor Interfaces Panel ⅩⅢ: Electrical Measurements of Schottky—Barrier Heightsand Band Offsets Problems 9Collective Phenomena at Interfaces: Superconductivity and Ferromagnetism 9.1 Superconductivity at Interfaces 9.1.1Some General Remarks 9.1.2Fundamentals of Superconductivity 9.1.3 Andreev Reflection 9.1.4 A Simple Model for Transport Through a NormalConductor—Superconductor Interface 9.2Josephson Junctions with Ballistic Transport 9.2.1 Josephson Effects 9.2.2 Josephson Currents and Andreev Levels 9.2.3Subharmonic Gap Structures 9.3An Experimental Example of a Superconductor—Semiconductor2DEG—Superconductor Josephson Junction 9.3.1Preparation of the Nb—2DEG—Nb Junction 9.3.2 Critical Currents Through the Nb—2DEG—Nb Junction 9.3.3The Current Carrying Regime 9.3.4Supercurrent Control by Non—equilibrium Carriers 9.4Ferromagnetism at Surfaces and within Thin Films 9.4.1The Band Model of Ferromagnetism 9.4.2Ferromagnetism in Reduced Dimensions 9.5Magnetic Quantum Well States 9.6Magnetic Interlayer Coupling 9.7Giant Magnetoresistance and Spin—Transfer Torque Mechanism 9.7.1 Giant Magnetoresistance (GMR) 9.7.2Magnetic Anisotropies and Magnetic Domains 9.7.3 Spin—Transfer Torque Effect: A MagneticSwitching Device Panel ⅩⅣ:Magneto—optical Characterization: Kerr Effect Panel ⅩⅤ: Spin—Polarized Scanning Tunneling Microscopy (SP—STM) Problems 10 Adsorption on Solid Surfaces 10.1Physisorption 10.2Chemisorption 10.3Work—Function Changes Induced by Adsorbates 10.4 Two—Dimensional Phase Transitions in Adsorbate Layers Contents 10.5Adsorption Kinetics Panel ⅩⅥ:Desorption Techniques Panel ⅩⅦ: Kelvin—Probe and Photoemission Measurements for the Study of Work—Function Changesand Semiconductor Interfaces Problems References Index