[正版] 北航 Professional English for Microelectronics微电子专业英语 陈

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书名：Professional English for Microelectronics微电子专业英语

定价：39元

出版社：北京航空航天大学出版社

ISBN：9787512417304

包装：平装

开本：16开

版次：2015年6月第1版

PART I Basic knowledge of semiconductor physics and semiconductor devices
Chapter 1 Semiconductor
1.1 Early history of semiconductors
1.2 Properties and materials of semiconductor
1.3 Band theory of solids
1.4 Charge carrier (electrons and holes)
1.4.1 The carrier concentration
1.4.2 Carrier generation and recombination
1.4.3 Drift and diffusion current
1.5 Electrical conduction
1.6 Doping of semiconductor
1.7 Type of semiconductor
1.7.1 N-type semiconductor
1.7.2 P-type semiconductor
1.8 Questions
1.9 References
Chapter 2 Semiconductor devices
2.1 PN junction
2.1.1 Basic structure of the PN junction
2.1.2 Unbiased PN junction
2.1.3 The current-voltage characteristic of PN junction
2.1.4 The breakdown of PN junction
2.1.5 Junction capacitance 
2.1.6 The applications of PN junction 
2.2 Schottky diode
2.2.1 The structure of Schottky diode
2.2.2 The principle of Schottky diode
2.2.3 The characteristics of Schottky diode
2.2.4 The applications of Schottky diode
2.3 Heterojunction diode
2.3.1 The concept of heterojunction
2.3.2 The characteristics of heterojunction diode
2.3.3 The application of heterojunction diode
2.4 Bipolar junction transistor(BJT)
2.4.1 The basic structure of BJT
2.4.2 The current transfer characteristic of transistor
2.4.3 Basic configurations and modes of operation
2.4.4 The application of transistor
2.5 The MOS transistor
2.5.1 The basic structure of MOS transistor
2.5.2 The form of inversion layer of MOSFET 
2.5.3 The basic operation and DC characteristic of MOSFET
2.5.4 The types of MOSFET
2.5.5 The terminal capacitances of MOSFET
2.5.6 The advantage and application of MOSFET
2.6 Questions
2.7 References
PART II Manufacturing technologies and processes
Chapter 3 Doping technology and hot processing
3.1 Doping
3.1.1 Diffusion
3.1.2 Ion implantation
3.1.3 Idealized ion implantation systems
3.1.4 Channeling effects
3.1.5 Shadowing effects
3.1.6 Ion implantation damage
3.2 Thermal oxidation
3.3 Rapid thermal proeessing(RTP)
3.3.1 RTP configuration and chamber design
3.3.2 Rapid thermal activation of impurities
3.3.3 Rapid thermal processing of dielectrics
3.4 Questions
3.5 References
Chapter 4 Pattern transfer
4.1 Photolithography
4.2 Photoresist (PR)
4.2.1 Composition of PR
4.2.2 The types of PR
4.2.3 The contrast curve of PR
4.3 The pre-exposure process
4.3.1 Priming
4.3.2 Photoresist coating
4.3.3 Soft bake
4.4 Alignment and exposure
4.4.1 Printer
4.4.2 Photomask fabrication
4.4.3 Alignment
4.4.4 Exposure
4.5 Postexposure
4.5.1 Postexposure bake
4.5.2 Development
4.5.3 Hard bake
4.5.4 Pattern inspection
4.6 Nonoptical lithographic techniques
4.6.1 X-ray lithography (XRL)
4.6.2 Projection X-ray lithography
4.6.3 Electron beam lithography (EBL)
4.6.4 Projection electron beam lithography (SCALPEL)
4.6.5 Ion beam lithography
4.6.6 EBL and XRL resist
4.7 Etch
4.7.1 Introduction
4.7.2 The characteristic of etch
4.7.3 Wet etch process
4.7.4 Chemical mechanical polishing (CMP)
4.7.5 Dry etching
4.8 High density plasma (HDP) etching
4.9 Liftoff
4.10 Questions
4.11 References
......
Chapter 9 How to make a successful presentation
9.1 Attention curve
9.2 How to make a great PowerPoint presentation
9.2.1 Create your narrative
9.2.2 Utilize the format
9.3 How to prepare an oral presentation
9.3.1 Before your presentation
9.3.2 During your presentation
9.3.3 Warnings for oral presentation
9.4 Questions
9.5 References